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ÉϿεص㣺ÖпÆÔº°ëµ¼ÌåËù Åàѵʱ¼ä | Åàѵ¿Î³Ì | ÊÚ¿Îר¼Ò | µ¥Î»Ãû³Æ | 22ÈÕ/9Ô £¨Öܶþ£© | 09:00-10:30 | GaN£»ùLED²ÄÁϵÄMOCVDÍâÑÓÉú³¤»ù´¡ÀíÂÛ | ÕŹúÒå ½ÌÊÚ | ±±¾©´óѧ¿í½û´ø°ëµ¼ÌåÑо¿ÖÐÐÄ | 10:40-12:00 | °ëµ¼ÌåÕÕÃ÷¹Ø¼ü¼¼Êõ·ÖÎö | ÂÞÒã ½ÌÊÚ | Ç廪´óѧµç×Óϵ | Îç²Í¡¢ÐÝϢʱ¼ä | 14:00-15:10 | ͼÐγĵ×ÖƱ¸¼°ÍâÑÓ¼¼Êõ | ãÆ·¢Íú ¸±Ñо¿Ô± | ÖпÆÔº°ëµ¼ÌåËù | 15:20-16:20 | SiC»ùLEDÉú³¤ | ÐìÏÖ¸Õ ½ÌÊÚ | ɽ¶«´óѧ¾§Ìå²ÄÁÏÑо¿Ëù | 16:30-17:30 | Éî×ÏÍâLED²ÄÁÏÉú³¤¼°Ó¦Óà | Íõ¾üϲ Ñо¿Ô± | ÖпÆÔº°ëµ¼ÌåËù | | 23ÈÕ/9Ô £¨ÖÜÈý£© | 09:00-10:30 | GaN»ù·Ç¼«ÐԺͰ뼫ÐÔ²ÄÁϺͷ¢¹âÆ÷¼þ | ÓÚÍ®¾ü ¸±½ÌÊÚ | ±±¾©´óѧÎïÀíѧԺ | 10:40-12:00 | ´¹Ö±½á¹¹LEDоƬÁ¼Âʵļ¼ÊõÆ¿¾±¼°¶Ô²ß·ÖÎö | ÍõÁ¼³¼Ñо¿Ô±¡¢Áõ־ǿ²©Ê¿ | ÖпÆÔº°ëµ¼ÌåËù | Îç²Í¡¢ÐÝϢʱ¼ä | 14:00-15:10 | ITOµç¼«¡¢±íÃæ´Ö»¯ | ÒÁÏþÑà ¸±Ñо¿Ô± | ÖпÆÔº°ëµ¼ÌåËù | 15:20-16:20 | °ëµ¼Ìå·¢¹âºÍ¿íÆ×·¢¹â¼¼Êõ | ³ÂÅô ½ÌÊÚ | ÄϾ©´óѧÎïÀíϵ | 16:30-17:30 | HVPEÉú³¤ÏµÍ³µÄ·¢Õ¹ºÍδÀ´ | ÐÞÏòÇ° ¸±½ÌÊÚ | ÄϾ©´óѧÎïÀíϵ | | 24ÈÕ/9Ô £¨ÖÜËÄ£© | 09:00-10:30 | GaN³Äµ×¼°ÆäÓ¦Óà | ¶ÎÈð·É ¸±Ñо¿Ô± | ÖпÆÔº°ëµ¼ÌåËù | 10:40-12:00 | MOCVDÉú³¤ÔÀíºÍÉè¼ÆÄ£Äâ | ×óÈ» ½ÌÊÚ | ½ËÕ´óѧÄÜÔ´Ó붯Á¦¹¤³ÌѧԺ | Îç²Í¡¢ÐÝϢʱ¼ä | 14:00-15:00 | ÍâÑÓƬµÄ²âÁ¿·½·¨ºÍÆÀ¼ÛÊֶΠ| Ëﱦ¾ê ²©Ê¿ | ÖпÆÔº°ëµ¼ÌåËù | 15:10-16:10 | ²Î¹ÛÖпÆÔº°ëµ¼ÌåÕÕÃ÷Ñз¢ÖÐÐÄ | | | ±¸×¢£º Åàѵ¿Î³ÌºÍʦ×ÊÒÔ¾ßÌåÉϿΰ²ÅÅΪ׼ - µÚ¶þ½ìÖÐÈÕÁªºÏGaN»ù²ÄÁϼ°Æ÷¼þÑÐÌÖ»á £¨9ÔÂ25ÈÕ£©
Date: September 25 (Fri), 2009 Venue: Capital Hotel Language: English ProgramChair: Guohong Wang (Institute of Semiconductors, CAS) 09:30-09:35 Opening address Jinmin Li (Director General£¬ Institute of Semiconductors, CAS) Takashi Egawa (Director£¬Research Center for Nano-Device and System, Nagoya Institute of Technology) 09:35-09:40 Honorary Professor Ceremony 09:45-10:10 Jicai Zhang (Nagoya Institute of Technology) AlGaN deep ultraviolet LED with different template,J. Zhang and T. Egawa 10:10-10:35 Zhitao Chen (Nagoya Institute of Technology) InAlN-based solar-blind photodiode grown by MOCVD, Z. Chen and T. Egawa 10:35-11:00 Youhua Zhu (Nagoya Institute of Technology) InGaN bule LED grown on 3C-SiC/Si (111), Y. Zhu and T. Egawa 11:00-11:25 Y. Aoki (Nagoya Institute of Technology) Electrical characterization for GaN with low energy electron irradiation,Y. Aoki, M. Kasuga, M. Kato, M. Ichimura 11:25-11:50 Kunyuan Xu (Sun Yat-Sen University) Study of THz oscillations in GaN-based planar nanodevices 12:00 Lunch Chair: Takashi Egawa£¨Nagoya Institute of Technology£© 13:30-13:55 Junxi Wang £¨Institute of Semiconductors, CAS£© Deep-UV LEDs material growth and application 13.55-14.20 Ruifei Duan £¨Institute of Semiconductors, CAS£© Performance enhancemnt of GaN LED homoepitaxy using InGaN prewells 14.20-14.45 Hongling Xiao £¨Institute of Semiconductors, CAS£© Research on InGaN for photovoltaic materials and devices 14.45-15.10 Qiang Hu £¨Institute of Semiconductors, CAS£© HVPE grown thick GaN film on wet-etching patterned sapphire 15:10-15.30 Coffee break Chair: Gang Wang (Sun Yat-Sen University) 15.30-15:55 Lili Sun £¨Institute of Semiconductors, CAS£© Effect of Indium Tin Oxide (ITO) on the Activation of Mg-doped GaN Films 15:55-16:20 Zhiqiang Liu (Institute of Semiconductors, CAS£© Research on vertical structure LEDs 16:20-16:45 Hua Yang £¨Institute of Semiconductors, CAS£© Investigation of GaN-based LEDs using ZnO Transparent Electrode 16:45-17:10 Meng Liang £¨Institute of Semiconductors, CAS£© Thermal design of high-brightness LED module - Åàѵ·ÑÓÃ
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