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Date: September 25 (Fri), 2009
Venue: Capital Hotel
Language: English

Program

Chair: Guohong Wang  (Institute of Semiconductors, CAS)
09:30-09:35     Opening address
Jinmin Li (Director General£¬ Institute of Semiconductors, CAS)
Takashi Egawa (Director£¬Research Center for Nano-Device and System, Nagoya Institute of Technology)
09:35-09:40     Honorary Professor Ceremony
09:45-10:10     Jicai Zhang  (Nagoya Institute of Technology)
AlGaN deep ultraviolet LED with different template,J. Zhang and T. Egawa
10:10-10:35     Zhitao Chen  (Nagoya Institute of Technology)
InAlN-based solar-blind photodiode grown by MOCVD, Z. Chen and T. Egawa
10:35-11:00     Youhua Zhu  (Nagoya Institute of Technology)
InGaN bule LED grown on 3C-SiC/Si (111), Y. Zhu and T. Egawa
11:00-11:25     Y. Aoki  (Nagoya Institute of Technology)
Electrical characterization for GaN with low energy electron irradiation,Y. Aoki, M. Kasuga, M. Kato, M. Ichimura
11:25-11:50    Kunyuan Xu  (Sun Yat-Sen University)
Study of THz oscillations in GaN-based planar nanodevices 
12:00          Lunch

Chair: Takashi Egawa£¨Nagoya Institute of Technology£©
13:30-13:55     Junxi Wang  £¨Institute of Semiconductors, CAS£©
Deep-UV LEDs material growth and application
13.55-14.20     Ruifei Duan  £¨Institute of Semiconductors, CAS£©
Performance enhancemnt of GaN LED homoepitaxy using InGaN prewells
14.20-14.45   Hongling Xiao £¨Institute of Semiconductors, CAS£©
Research on InGaN for photovoltaic materials and devices
14.45-15.10   Qiang Hu     £¨Institute of Semiconductors, CAS£©
HVPE grown thick GaN film on wet-etching patterned sapphire
15:10-15.30  Coffee break

Chair: Gang Wang   (Sun Yat-Sen University)
15.30-15:55   Lili Sun       £¨Institute of Semiconductors, CAS£©
Effect of Indium Tin Oxide (ITO) on the Activation of Mg-doped GaN Films
15:55-16:20  Zhiqiang Liu     (Institute of Semiconductors, CAS£©
Research on vertical structure LEDs
16:20-16:45   Hua Yang    £¨Institute of Semiconductors, CAS£©
Investigation of GaN-based LEDs using ZnO Transparent Electrode
16:45-17:10   Meng Liang  £¨Institute of Semiconductors, CAS£©
Thermal design of high-brightness LED module

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