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Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates
2010-7-5
11:37:27 中国半导体照明网
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Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates第1页
Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates第2页
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